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| RB520S-30 Diodes Schottky barrier diode RB520S-30 Applications Low current rectification Dimensions (Unit : mm) 0.80.05 0.120.05 Land size figure (Unit : mm) 0.8 0.6 1.20.05 1.60.1 Features 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. EMD2 Structure Construction Silicon epitaxial planar 0.30.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.60.1 Taping specifications (Unit : mm) 4.00.1 2.00.05 1.50.05 0.20.05 3.50.05 1.750.1 8.00.15 1.30.06 0 0.5 0.950.06 0 Empty poc ket 4.00.1 2.00.05 1.260.05 0 2.450.1 0.6 0.2 0.760.05 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 200 1 125 -40 to +125 Unit V mA A Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.6 1 Unit V A Conditions IF=200mA VR=10V 1.7 Rev.C 1/3 RB520S-30 Diodes Electrical characteristic curves (Ta=25C) 1000 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 Ta=25 Ta=-25 Ta=125 Ta=75 1000000 100000 10000 1000 100 Ta=-25 10 1 0 10 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 Ta=75 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MH Ta=25 10 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 530 FORWARD VOLTAGE:VF(mV) Ta=25 IF=200mA n=30pcs 1000 900 REVERSE CURRENT:IR(nA) 800 700 600 500 400 300 200 100 0 IR DISPERSION MAP AVE:114nA Ta=25 VR=10V n=30pcs 50 45 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 40 35 30 25 20 15 10 5 0 AVE:28.2pF Ta=25 f=1MHz VR=0V n=10pcs 520 510 500 490 AVE:507.6mV 480 VF DISPERSION MAP Ct DISPERSION MAP 30 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 IFSM DISRESION MAP AVE:5.60A Ifsm 8.3ms 1cyc 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 10 Ifsm t 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Mounted on epoxy board IM=10mA IF=100mA 0.3 0.01 0.008 REVERSE POWER DISSIPATION:PR (W) 0.006 D=1/2 0.004 0.002 Sin(180) DC 1000 1ms time FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.2 Sin(180) DC 300us Rth(j-a) 100 Rth(j-c) 0.1 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 2/3 RB520S-30 Diodes 0.5 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t T D=1/2 Io VR D=t/T VR=15V Tj=125 0A 0V t DC T Io VR D=t/T VR=15V Tj=125 0.4 0.3 0.2 DC 0.4 0.3 D=1/2 0.2 0.1 Sin(180) 0.1 Sin(180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating curve (Io-Ta) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating curve (Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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